Malvino Chapter 14

Chapter 14 

1. Which of the following devices revolutionized the computer industry? 
a. JFET 
b. D-MOSFET 
c. E-MOSFET 
d. Power FET 

2. The voltage that turns on an EMOS device is the 
a. Gate-source cutoff voltage 
b. Pinchoff voltage 
c. Threshold voltage 
d. Knee voltage 

3. Which of these may appearon the data sheet of an enhancement-mode MOSFET? 
a. VGS(th) 
b. ID(on) 
c. VGS(on) 
d. All of the above 


4. The VGS(on) of an n-channel E-MOSFET is 
a. Less than the threshold voltage 
b. Equal to the gate-source cutoff voltage 
c. Greater than VDS(on) 
d. Greater than VGS(th) 

5. An ordinary resistor is an example of 
a. A three-terminal device 
b. An active load 
c. A passive load 
d. A switching device 

6. An E-MOSFET with its gate connected to its drain is an example of 
a. A three-terminal device 
b. An active load 
c. A passive load 
d. A switching device 

7. An E-MOSFET that operates at cutoff or in the ohmic region is an example of 
a. A current source 
b. An active load 
c. A passive load 
d. A switching device 

8. CMOS stands for 
a. Common MOS 
b. Active-load switching 
c. p-channel and n-channel devices 
d. Complementary MOS 

9. VGS(on) is always 
a. Less than VGS(th) 
b. Equal to VDS(on) 
c. Greater than VGS(th) 
d. Negative 

10. With active-load switching, the upper E-MOSFET is a 
a. Two-terminal device 
b. Three-terminal device 
c. Switch 
d. Small resistance 

11. CMOS devices use 
a. Bipolar transistors 
b. Complementary E-MOSFETs 
c. Class A operation 
d. DMOS devices 

12. The main advantage of CMOS is its 
a. High power rating 
b. Small-signal operation 
c. Switching capability 
d. Low power consumption 

13. Power FETs are 
a. Integrated circuits 
b. Small-signal devices 
c. Used mostly with analog signals 
d. Used to switch large currents 

14. When the internal temperature increases in a power FET, the 
a. Threshold voltage increases 
b. Gate current decreases 
c. Drain current decreases 
d. Saturation current increases 

15. Most small-signal E-MOSFETs are found in 
a. Heavy-current applications 
b. Discrete circuits 
c. Disk drives 
d. Integrated circuits 

16. Most power FETS are 
a. Used in high-current applications 
b. Digital computers 
c. RF stages 
d. Integrated circuits 

17. An n-channel E-MOSFET conducts when it has 
a. VGS > VP 
b. An n-type inversion layer 
c. VDS > 0 
d. Depletion layers 

18. With CMOS, the upper MOSFET is 
a. A passive load 
b. An active load 
c. Nonconducting 
d. Complementary 

19. The high output of a CMOS inverter is 
a. VDD/2 
b. VGS 
c. VDS 
d. VDD 

20. The RDS(on) of a power FET 
a. Is always large 
b. Has a negative temperature coefficient 
c. Has a positive temperature coefficient 
d. Is an active load




Also try:

Malvino Chapter 1
Malvino Chapter 2
Malvino Chapter 3
Malvino Chapter 4
Malvino Chapter 5
Malvino Chapter 6
Malvino Chapter 7
Malvino Chapter 8
Malvino Chapter 9
Malvino Chapter 10
Malvino Chapter 11
Malvino Chapter 12
Malvino Chapter 13
Malvino Chapter 15
Malvino Chapter 16
Malvino Chapter 17
Malvino Chapter 18
Malvino Chapter 19
Malvino Chapter 20
Malvino Chapter 21
Malvino Chapter 22
Malvino Chapter 23
Malvino Chapter 24