Malvino Chapter 2

Chapter 2 

1. The nucleus of a copper atom contains how many 
protons? 
a. 1 
b. 4 
c. 18 
d. 29 

2. The net charge of a neutral copper atom is 
a. 0 
b. +1 
c. -1 
d. +4 

3. Assume the valence electron is removed from a 
copper atom. The net charge of the atom becomes 
a. 0 
b. + 1 
c. -1 
d. +4 

4. The valence electron of a copper atom experiences 
what kind of attraction toward the nucleus? 
a. None 
b. Weak 
c. Strong 
d. Impossible to say 

5. How many valence electrons does a silicon atom 
have? 
a. 0 
b. 1 
c. 2 
d. 4 

6. Which is the most widely used semiconductor? 
a. Copper 
b. Germanium 
c. Silicon 
d. None of the above 

7. How many protons does the nucleus of a silicon atom 
contain? 
a. 4 
b. 14 
c. 29 
d. 32 

8. Silicon atoms combine into an orderly pattern called a 
a. Covalent bond 
b. Crystal 
c. Semiconductor 
d. Valence orbit 

9. An intrinsic semiconductor has some holes in it at 
room temperature. What causes these holes? 
a. Doping 
b. Free electrons 
c. Thermal energy 
d. Valence electrons 

10. Each valence electron in an intrinsic semiconductor 
establishes a 
a. Covalent bond 
b. Free electron 
c. Hole 
d. Recombination 

11. The merging of a free electron and a hole is called 
a. Covalent bonding 
b. Lifetime 
c. Recommendation 
d. Thermal energy 

12. At room temperature an intrinsic silicon crystal acts 
approximately like 
a. A battery 
b. A conductor 
c. An insulator 
d. A piece of copper wire 

13. The amount of time between the creation of a hole 
and its disappearance is called 
a. Doping 
b. Lifetime 
c. Recombination 
d. Valence 

14. The valence electron of a conductor is also called a 
a. Bound electron 
b. Free electron 
c. Nucleus 
d. Proton 

15. A conductor has how many types of flow? 
a. 1 
b, 2 
c. 3 
d. 4 

16. A semiconductor has how many types of flow? 
a. 1 
b. 2 
c. 3 
d. 4 

17. When a voltage is applied to a semiconductor, 
holes will flow 
a. Away from the negative potential 
b. Toward the positive potential 
c. In the external circuit 
d. None of the above 

18. A conductor has how many holes? 
a. Many 
b. None 
c. Only those produced by thermal energy 
d. The same number as free electrons 

19. In an intrinsic semiconductor, the number of free 
electrons 
a. Equals the number of holes 
b. Is greater than the number of holes 
c. Is less than the number of holes 
d. None of the above 

20. Absolute zero temperature equals 
a. -273 degrees C 
b. 0 degrees C 
c. 25 degrees C 
d. 50 degrees C 

21. At absolute zero temperature an intrinsic 
semiconductor has 
a. A few free electrons 
b. Many holes 
c. Many free electrons 
d. No holes or free electrons 

22. At room temperature an intrinsic semiconductor has 
a. A few free electrons and holes 
b. Many holes 
c. Many free electrons 
d. No holes 

23. The number of free electrons and holes in an intrinsic 
semiconductor increases when the temperature 
a. Decreases 
b. Increases 
c. Stays the same 
d. None of the above 

24. The flow of valence electrons to the left means that 
holes are flowing to the 
a. Left 
b. Right 
c. Either way 
d. None of the above 

25. Holes act like 
a. Atoms 
b. Crystals 
c. Negative charges 
d. Positive charges 

26. Trivatent atoms have howmany valence electrons? 
a. 1 
b. 3 
c. 4 
d. 5 

27. A donor atom has how many valence electrons? 
a. 1 
b. 3 
c. 4 
d. 5 

28. If you wanted to produce a p-type semiconductor, 
which of these would you use? 
a. Acceptor atoms 
b. Donor atoms 
c. Pentavalent impurity 
d. Silicon 

29. Holes are the minority carriers in which type of 
semiconductor? 
a. Extrinsic 
b. Intrinsic 
c. n-type 
d. p-type 

30. How many free electrons does a p-type 
semiconductor contain? 
a. Many 
b. None 
c. Only those produced by thermal energy 
d. Same number as holes 

31. Silver is the best conductor. How many valence 
electrons do you think it has? 
a. 1 
b. 4 
c. 18 
d. 29 

32. Suppose an intrinsic semiconductor has 1 billion free 
electrons at room temperature. If the temperature 
changes to 75'C, how many holes are there? 
a. Fewer than 1 billion 
b. 1 billion 
c. More than 1 billion 
d. Impossible to say 

33. An external voltage source is applied to a p-type 
semiconductor. If the left end of the crystal is positive, 
which way do the majority carriers flow? 
a. Left 
b. Right 
c. Neither 
d. Impossible to say 

34. Which of the following doesn't fit in the group? 
a. Conductor 
b. Semiconductor 
c. Four valence electrons 
d. Crystal structure 

35. Which of the following is approximately equal to room 
temperature? 
a. 0 degrees C 
b. 25 degrees C 
c. 50 degrees C 
d. 75degrees C 

36. How many electrons are there in the valence orbit of 
a silicon atom within a crystal? 
a. 1 
b. 4 
c. 8 
d. 14 

37. Positive ions are atoms that have 
a. Gained a proton 
b. Lost a proton 
c. Gained an electron 
d. Lost an electron 

38. Which of the following describes an n-type 
semiconductor? 
a. Neutral 
b. Positively charged 
c. Negatively charged 
d. Has many holes 

39. A p-type semiconductor contains holes and 
a. Positive ions 
b. Negative ions 
c. Pentavalent atoms 
d. Donor atoms 

40. Which of the following describes a p-type 
semiconductor? 
a. Neutral 
b. Positively charged 
c. Negatively charged 
d. Has many free electrons 

41. Which of the following cannot move? 
a. Holes 
b. Free electrons 
c. Ions 
d. Majority carriers 

42. What causes the depletion layer? 
a. Doping 
b. Recombination 
c. Barrier potential 
d. Ions 

43. What is the barrier potential of a silicon diode at room 
temperature? 
a. 0.3 V 
b. 0.7 V 
c. 1 V 
d. 2 mV per degree Celsius 

44. To produce a large forward current in a silicon diode, 
the applied voltage must be greater than 
a. 0 
b. 0.3 V 
c. 0.7 V 
d. 1 V 

45. In a silicon diode the reverse current is usually 
a. Very small 
b. Very large 
c. Zero 
d. In the breakdown region 

46. Surface-leakage current is part of the 
a. Forward current 
b. Forward breakdown 
c. Reverse current 
d. Reverse breakdown 

47. The voltage where avalanche occurs is called the 
a. Barrier potential 
b. Depletion layer 
c. Knee voltage 
d. Breakdown voltage 

48. Diffusion of free electrons across the junction of an 
unbiased diode produces 
a. Forward bias 
b. Reverse bias 
c. Breakdown 
d. The depletion layer 

49. When the reverse voltage increases from 5 to 10 V, 
the depletion layer 
a. Becomes smaller 
b. Becomes larger 
c. Is unaffected 
d. Breaks down 

50. When a diode is forward-biased, the recombination of 
free electrons and holes may produce 
a. Heat 
b. Light 
c. Radiation 
d. All of the above 


Also try:

Malvino Chapter 1
Malvino Chapter 3
Malvino Chapter 4
Malvino Chapter 5
Malvino Chapter 6
Malvino Chapter 7
Malvino Chapter 8
Malvino Chapter 9
Malvino Chapter 10
Malvino Chapter 11
Malvino Chapter 12
Malvino Chapter 13
Malvino Chapter 14
Malvino Chapter 15
Malvino Chapter 16
Malvino Chapter 17
Malvino Chapter 18
Malvino Chapter 19
Malvino Chapter 20
Malvino Chapter 21
Malvino Chapter 22
Malvino Chapter 23
Malvino Chapter 24